2011 / 08 / 22 ver.1 page 1 SPN9910 n-channel enhancement mode mosfet description applications the SPN9910 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for most of synchronous buck converter applications. z dc/dc converter z load switch z synchronous buck converter pin configuration features to-252 to-251 part marking ? 60v/60a, r ds(on) = 10m ? @v gs = 10v ? 60v/60a, r ds(on) = 12.0m ? @v gs =4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-252 . to-251 package design
2011 / 08 / 22 ver.1 page 2 SPN9910 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN9910t252rgb to-252 SPN9910 SPN9910t251tgb to-251 SPN9910 SPN9910t252rgb: tape reel ; pb ? free; halogen ? free SPN9910t251tgb: tube ; pb ? free; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 60 v gate ?source voltage v gss 20 v t a =25 60 continuous drain current(t j =150 ) t a =100 i d 47 a pulsed drain current i dm 120 a avalanche current i as 38 a power dissipation t a =25 p d 40 w avalanche energy with single pulse ( tj=25 , l = 0.1mh , i as = 38a , v dd = 25v. ) eas 123 mj operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 62 /w
2011 / 08 / 22 ver.1 page 3 SPN9910 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 60 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =48v,v gs =0v 1 zero gate voltage drain current i dss v ds =48v,v gs =0v t j = 55 c 5 ua on-state drain current i d(on) v ds 5v,v gs =10v 60 a v gs = 10v,i d =15a 10 12 drain-source on-resistance r ds(on) v gs = 4.5v,i d =10a 12 15 m ? forward transconductance gfs v ds =5v,i d =15a 47 s diode forward voltage v sd i s =60a,v gs =0v 1.2 v dynamic total gate charge q g 24 gate-source charge q gs 6.9 gate-drain charge q gd v ds =48v,v gs =4.5v i d = 12a 10 nc input capacitance c iss 3200 output capacitance c oss 210 reverse transfer capacitance c rss v ds =15v,v gs =0v f=1mhz 145 pf t d(on) 20 turn-on time t r 4 t d(off) 84.5 turn-off time t f v dd =30v, i d =2a, v gen =10v, r g =3.3 ? 6.5 ns
2011 / 08 / 22 ver.1 page 4 SPN9910 n-channel enhancement mode mosfet typical characteristics fig. 1 typical output characteristics fig. 2 on-resistance vs. gate voltage fig. 3 forward characteristics fig. 4 gate charge characteristics reverse diodes fig. 5 vgs vs. junction temperature fig. 6 on-resistance vs. temperature
2011 / 08 / 22 ver.1 page 5 SPN9910 n-channel enhancement mode mosfet typical characteristics fig. 7 typical capacitance characteristics fig. 8 maximum safe operation area fig. 9 effective transient thermal impedance fig. 10 switching time waveform fig. 11 unclamped inductive waveform
2011 / 08 / 22 ver.1 page 6 SPN9910 n-channel enhancement mode mosfet to-252 package outline
2011 / 08 / 22 ver.1 page 7 SPN9910 n-channel enhancement mode mosfet to-251 package outline
2011 / 08 / 22 ver.1 page 8 SPN9910 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2011 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1 park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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